Flattop mode shaping of a vertical cavity surface emitting laser using an external-cavity aspheric mirror

Femtosecond synchronously mode-locked vertical-external cavity surface-emitting laser.

The behavior of a room temperature synchronously mode-locked vertical-external cavity surface-emitting laser (VECSEL) operating at 980 nm is reported. The laser performance was found to be qualitatively the same for different pump pulse duration (3.6 ps and 70 fs). The pulse duration of the laser is limited by strong self-phase modulation to around 10-40 ps. By compressing the strongly chirped ...

Vertical cavity surface emitting terahertz laser.

Vertical cavity surface emitting terahertz lasers can be realized in conventional semiconductor microcavities with embedded quantum wells in the strong coupling regime. The cavity is to be pumped optically at half the frequency of the 2p exciton state. Once a threshold population of 2p excitons is achieved, a stimulated terahertz transition populates the lower exciton-polariton branch, and the ...

An overview of laser operation and modelocking of a vertical external cavity surface emitting laser (VECSEL)

Self-mode-locked quantum-dot vertical-external-cavity surface-emitting laser.

We present the first self-mode-locked optically pumped quantum-dot semiconductor disk laser. Our mode-locked device emits sub-picosecond pulses at a wavelength of 1040 nm and features a record peak power of 460 W at a repetition rate of 1.5 GHz. In this work, we also investigate the temperature dependence of the pulse duration as well as the time-bandwidth product for stable mode locking.

Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene

Final Report: Mode-locking of an InAs Quantum Dot Based Vertical External Cavity Surface Emitting Laser Using Atomic Layer Graphene Report Title The InAs quantum dot (QD) grown on GaAs substrates represents a highly performance active region in the 1 1.3 μm wavelength range. The use of such QDs in vertical-cavity devices has resulted in high-power and broad gain bandwidth VECSELs in the NIR. In...